- 品牌:
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- Microchip Technology (20)
- Micron Technology (201)
- Etron Technology (4)
- MoSys (4)
- 封装/外壳:
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- 供应商器件封装:
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- 电压 - 供电:
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- 存储容量:
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- 存储器格式:
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- 写周期时间 - 字,页:
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376 条记录
| 图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
|---|---|---|---|---|---|---|
|
Micron Technology | IC DRAM 1GBIT PAR... |
1 | 2,000 | 加入询价 | |
|
Micron Technology | IC DRAM 512MBIT PA... |
1 | 2,000 | 加入询价 | |
|
Micron Technology | IC DRAM 512MBIT PA... |
1 | 2,000 | 加入询价 | |
|
Integrated Silicon Solution, Inc. (ISSI) | IC DRAM 1GBIT PAR... |
1 | 2,000 | 加入询价 | |
|
Insignis Technology Corporation | DDR2 1GB X8 FBGA 8X... |
1 | 2,000 | 加入询价 | |
|
Insignis Technology Corporation | DDR2 1GB X8 FBGA 8X... |
1 | 2,000 | 加入询价 | |
|
Insignis Technology Corporation | NDB16PFC-4DET: DDR... |
1 | 2,000 | 加入询价 | |
|
Insignis Technology Corporation | NDB16PFC-4DET: DDR... |
1 | 2,000 | 加入询价 | |
|
Micron Technology | IC DRAM 1GBIT PAR... |
1 | 2,000 | 加入询价 | |
|
Integrated Silicon Solution, Inc. (ISSI) | 512M, 1.8V, DDR2, 32Mx16... |
1 | 2,000 | 加入询价 | |
|
Integrated Silicon Solution, Inc. (ISSI) | 512M, 1.8V, DDR2, 32Mx16... |
1 | 2,000 | 加入询价 | |
|
Alliance Memory, Inc. | IC DRAM 1GBIT PAR... |
1 | 2,000 | 加入询价 | |
|
Integrated Silicon Solution, Inc. (ISSI) | 1G, 1.8V, DDR2, 64Mx16, ... |
1 | 2,000 | 加入询价 | |
|
Integrated Silicon Solution, Inc. (ISSI) | 512M, 1.8V, DDR2, 64Mx8,... |
1 | 2,000 | 加入询价 | |
|
Integrated Silicon Solution, Inc. (ISSI) | 1G, 1.8V, DDR2, 64Mx16, ... |
1 | 2,000 | 加入询价 | |
|
Integrated Silicon Solution, Inc. (ISSI) | 512M, 1.8V, DDR2, 64Mx8,... |
1 | 2,000 | 加入询价 | |
|
Alliance Memory, Inc. | IC DRAM 1GBIT PAR... |
1 | 2,000 | 加入询价 | |
|
Integrated Silicon Solution, Inc. (ISSI) | 1G, 1.8V, DDR2, 128Mx8, ... |
1 | 2,000 | 加入询价 | |
|
Integrated Silicon Solution, Inc. (ISSI) | 1G, 1.8V, DDR2, 128Mx8, ... |
1 | 2,000 | 加入询价 | |
|
Insignis Technology Corporation | IC DRAM 2GBIT PAR... |
1 | 2,000 | 加入询价 |
