- 品牌:
-
- Microchip Technology (20)
- Micron Technology (201)
- Etron Technology (4)
- MoSys (4)
- 封装/外壳:
-
- 供应商器件封装:
-
- 电压 - 供电:
-
- 存储容量:
-
- 技术:
-
- 时钟频率:
-
- 存储器格式:
-
- 存储器组织:
-
- 存储器接口:
-
- 写周期时间 - 字,页:
-
376 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
![]() |
Winbond Electronics Corporation | IC DRAM 1GBIT SST... |
1 | 413 | 加入询价 | |
![]() |
Micron Technology | IC DRAM 256MBIT PA... |
1 | 456 | 加入询价 | |
![]() |
Micron Technology | IC DRAM 1GBIT PAR... |
1 | 900 | 加入询价 | |
![]() |
Micron Technology | IC DRAM 512MBIT PA... |
1 | 745 | 加入询价 | |
![]() |
Alliance Memory, Inc. | IC DRAM 2GBIT SST... |
1 | 64 | 加入询价 | |
![]() |
MoSys | IC SRAM 576MBIT PA... |
1 | 24 | 加入询价 | |
![]() |
Etron Technology | IC DRAM 256MBIT PA... |
1 | 319 | 加入询价 | |
![]() |
Integrated Silicon Solution, Inc. (ISSI) | IC DRAM 1GBIT PAR... |
1 | 1,495 | 加入询价 | |
![]() |
Micron Technology | IC DRAM 2GBIT PAR... |
1 | 23 | 加入询价 | |
![]() |
Winbond Electronics Corporation | IC DRAM 512MBIT PA... |
1 | 2,000 | 加入询价 | |
![]() |
Integrated Silicon Solution, Inc. (ISSI) | IC DRAM 2GBIT PAR... |
1 | 6 | 加入询价 | |
![]() |
Winbond Electronics Corporation | IC DRAM 2GBIT PAR... |
1 | 10 | 加入询价 | |
![]() |
Integrated Silicon Solution, Inc. (ISSI) | IC DRAM 2GBIT PAR... |
1 | 2,000 | 加入询价 | |
![]() |
Integrated Silicon Solution, Inc. (ISSI) | IC DRAM 2GBIT PAR... |
1 | 2,000 | 加入询价 | |
![]() |
Alliance Memory, Inc. | IC DRAM 2GBIT PAR... |
1 | 2,000 | 加入询价 | |
![]() |
Winbond Electronics Corporation | IC DRAM 128MBIT PA... |
1 | 2,000 | 加入询价 | |
![]() |
Winbond Electronics Corporation | IC DRAM 128MBIT PA... |
1 | 2,000 | 加入询价 | |
![]() |
Winbond Electronics Corporation | IC DRAM 512MBIT PA... |
1 | 2,000 | 加入询价 | |
![]() |
Winbond Electronics Corporation | IC DRAM 512MBIT PA... |
1 | 2,000 | 加入询价 | |
![]() |
Winbond Electronics Corporation | IC DRAM 256MBIT PA... |
1 | 2,000 | 加入询价 |