- 工作温度：
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- 封装/外壳：
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- 电压 - 集射极击穿（最大值）：
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- 测试条件：
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- 不同 Vge、Ic 时 Vce(on)（最大值）：
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- 栅极电荷：
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- 25°C 时 Td（开/关）值：
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| 图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | IGBT 600V 30A 170W TO... |
1 | 94 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | D-IGBT TO-247 VCES=... |
1 | 32 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | D-IGBT TO-247 VCES=... |
1 | 6 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | PB-F IGBT / TRANSI... |
1 | 25 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | PB-F IGBT / TRANSI... |
1 | 2,000 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | PB-F IGBT / TRANSI... |
1 | 2,000 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | DISCRETE IGBT TR... |
1 | 2,000 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | IGBT 400V 1W 8-SOIC |
1 | 2,000 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | IGBT 400V 600MW 8TSS... |
1 | 2,000 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | IGBT 600V 50A 240W TO... |
1 | 2,000 | 加入询价 |
